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Revealing Hidden Surface States of Non-Polar GaN Facets by an Ab Initio Tailored STM Approach

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Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Lymperakis, L., Weidlich, P. H., Eisele, H., Schnedler, M., Nys, J.-P., Grandidier, B., et al. (2013). Revealing Hidden Surface States of Non-Polar GaN Facets by an Ab Initio Tailored STM Approach. Talk presented at 10th International Conference on Nitride Semiconductors. Washigton DC, USA. 2013-08-25 - 2013-08-30.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-2202-E
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