Revealing Hidden Surface States of Non-Polar GaN Facets by an Ab Initio 
Tailored STM Approach

Lymperakis, L.; Weidlich, P. H.; Eisele, H.; Schnedler, M.; Nys, J.-P.; Grandidier, B.; Stievenard, D.; Dunin-Borkowski, R.; Neugebauer, J.; Ebert, P.

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Revealing Hidden Surface States of Non-Polar GaN Facets by an Ab Initio Tailored STM Approach

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Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Lymperakis, L., Weidlich, P. H., Eisele, H., Schnedler, M., Nys, J.-P., Grandidier, B., et al. (2013). Revealing Hidden Surface States of Non-Polar GaN Facets by an Ab Initio Tailored STM Approach. Talk presented at 10th International Conference on Nitride Semiconductors. Washigton DC, USA. 2013-08-25 - 2013-08-30.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-2202-E

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