Ab-initio based comparitive study of In incorporation and surface segregation 
on III- and N-face {0001} InGaN surfaces

Duff, A.; Lymperakis, L.; Neugebauer, J.

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Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces

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Duff, A.
Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Lymperakis, L.
Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Duff, A., Lymperakis, L., & Neugebauer, J. (2011). Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces. Talk presented at 9th International Conference of Nitride Semi-Conductors. Glasgow, UK. 2011-07-10 - 2011-07-15.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-30E6-7

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