The Bandgaps of GaN and InN in Zinc-blende and Wurtzite Phase: DFT Calculations 
Using the Exact Exchange (EXX) Functional

Wahn, M.; Neugebauer, J.

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The Bandgaps of GaN and InN in Zinc-blende and Wurtzite Phase: DFT Calculations Using the Exact Exchange (EXX) Functional

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Wahn, M.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Wahn, M., & Neugebauer, J. (2005). The Bandgaps of GaN and InN in Zinc-blende and Wurtzite Phase: DFT Calculations Using the Exact Exchange (EXX) Functional. Talk presented at Workshop Forschergruppe Bremen. Bad Bederkesa, Germany. 2005-11-03.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-5D53-9

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