Hall effect and magnetoresistance in UNiSn

Diehl, J.; Fischer, H.; Köhler, R.; Geibel, C.; Steglich, F.; Maeda, Y.; Takabatake, T.; Fujii, H.

doi:10.1016/0921-4526(93)90680-5

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Hall effect and magnetoresistance in UNiSn

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Diehl, J., Fischer, H., Köhler, R., Geibel, C., Steglich, F., Maeda, Y., et al. (1993). Hall effect and magnetoresistance in UNiSn. Physica B-Condensed Matter, 186-88, 708-710. doi:10.1016/0921-4526(93)90680-5.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-DC6C-4

Abstract

We have reinvestigated the Hall effect and the magnetoresistance of UNiSn in a high-quality sample. Analysis of the results indicate the presence of at least three different types of carriers in the semiconducting state and a complex behavior at the transition from paramagnetic semiconductor to antiferromagnetic metal. Contrary to the expected result we observed only small changes in the carrier concentration but a large increase in the mobility.