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Journal Article

Atomic scale structure and optical emission of AlxGa1-xAs/GaAs quantum wells

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Malzer,  S.
Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society;

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Doehler,  G. H.
Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society;

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Citation

Ropers, C., Wenderoth, M., Winking, L., Reusch, T. C. G., Erdmann, M., Ulbrich, R. G., et al. (2007). Atomic scale structure and optical emission of AlxGa1-xAs/GaAs quantum wells. PHYSICAL REVIEW B, 75(11): 115317. doi:10.1103/PhysRevB.75.115317.


Cite as: http://hdl.handle.net/11858/00-001M-0000-002D-6D48-0
Abstract
A combined study of the optical and structural properties of AlGaAs/GaAs quantum wells is presented. Microphotoluminescence experiments, magnetomicrophotoluminescence, and atomically resolved cross-sectional scanning tunneling microscopy were performed on the same quantum well sample. Constant-current topographs with aluminum and/or gallium sensitivity are used to directly extract disorder potentials. Using these potentials, exciton absorption spectra, microphotoluminescence spectra, and diamagnetic shifts of individual exciton states are calculated in an envelope function approximation. Very good agreement between the theoretical and experimental results is found.