Kruse, J. E., Lymperakis, L., Eftychis, S., Adikimenakis, A., Doundoulakis, G., Tsagaraki, K., Androulidaki, M., Olziersky,
A., Dimitrakis, P., Ioannou-Sougleridis, V., Normand, P., Koukoula, T., Kehagias, T., Komninou, P., Konstantinidis, G., &
Georgakilas, A. (2016). Selective-area growth of GaN nanowires on SiO2-masked
Si (111) substrates by molecular beam epitaxy. Journal of Applied Physics, 119(22):.
doi:10.1063/1.4953594.