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Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures

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Citation

Roldan Cuenya, B., Doi, M., Keune, W., Hoch, S., Reuter, D., Wieck, A., et al. (2003). Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures. Applied Physics Letters, 82(7): 1072. doi:10.1063/1.1542934.


Cite as: http://hdl.handle.net/21.11116/0000-0006-E40F-9
Abstract
An optimized heterostructure design and an optimized surface sputter-cleaning procedure allow thegrowth of high-quality epitaxial Fe(001) thin films at Ts 50 ° C on selectively doped GaAs/Al0.35Ga0.65 As heterostructures, while retaining the high quality transport property of thetwo-dimensional electron gas. Magneto-optic Kerr effect measurements and model calculationsindicate a dominant uniaxial in-plane anisotropy (easy axis along [110], hard axis along [1-10] and small coercivity (~15 Oe). Interface sensitive 57Fe Mössbauer measurements prove the absenceof both magnetic ‘‘dead layers’’ and ‘‘half-magnetization’’ phases (compared to pure Fe), and provide evidence for intermixing within a few monolayers, retaining, however, a metallic Fe stateand high Fe magnetic moments at the interface.