Preparation and characterization of FeSe and Bi nanostructures on Bi2Se3(0001): 
A scanning tunneling microscopy study

Sevriuk, V.; Sander, D.

doi:10.1016/B978-0-12-409547-2.14197-6

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Buchkapitel

Preparation and characterization of FeSe and Bi nanostructures on Bi₂Se₃(0001): A scanning tunneling microscopy study

MPG-Autoren

Sevriuk, V.
Max Planck Institute of Microstructure Physics, Max Planck Society;

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Sander, D.
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://doi.org/10.1016/B978-0-12-409547-2.14197-6
(Verlagsversion)

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Zitation

Sevriuk, V., & Sander, D. (2018). Preparation and characterization of FeSe and Bi nanostructures on Bi₂Se₃(0001): A scanning tunneling microscopy study. In K. Wandelt (Ed.), Encyclopedia of interfacial chemistry: surface science and electrochemistry (pp. 567-572). Elsevier. doi:10.1016/B978-0-12-409547-2.14197-6.

Zitierlink: https://hdl.handle.net/21.11116/0000-0009-2B58-5

Zusammenfassung

Procedures for the preparation of Bi₂Se₃(0001) surfaces, FeSe atomic layers, and Bi bilayers on Bi₂Se₃(0001) are presented. Bi₂Se₃(0001) surfaces are characterized by terraces separated by quintuple layer high steps of 0.95 nm height. Epitaxial FeSe islands with lateral extensions of several hundred nanometers and a few unit cell (nm) thickness are produced by Fe deposition at room temperature and subsequent annealing at 650 K. These islands are under an anisotropic in-plane strain (a=0.377±0.002 nm, b=0.385±0.004 nm) with respect to the bulk FeSe reference state (a_FeSE,bulk=0.377 nm). Bi bilayers are formed on Bi₂Se₃(0001) by atomic hydrogen plasma etching, which removes Se from the Bi₂Se₃ sample surface. Scanning tunneling microscopy and scanning tunneling spectroscopy are used to characterize the Bi₂Se₃ substrate and the nanostructures formed on its surface. A differential conductance peak near V identifies a defect-free Bi bilayer on Bi₂Se₃(0001).