English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
Add to Basket
  Local TagsRelease HistoryDetailsSummary

Released
Journal Article

Geometrical and electronic structure of the MBE-prepared GaAs(113)A surface

MPS-Authors
/persons/resource/persons22105

Setzer,  Carsten
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons250890

Platen,  Jutta
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21544

Geng,  Peter
Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21990

Ranke,  Wolfgang
Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21665

Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Setzer, C., Platen, J., Geng, P., Ranke, W., & Jacobi, K. (1997). Geometrical and electronic structure of the MBE-prepared GaAs(113)A surface. Surface Science, 377–379, 125-129. doi:10.1016/S0039-6028(96)01377-5.


Cite as: https://hdl.handle.net/21.11116/0000-0008-B520-7
Abstract
The GaAs (113)A surface was prepared by molecular beam epitaxy and investigated in situ by means of low-energy electron diffraction, surface core level spectroscopy and angle-resolved valence band photoemission. One stable, (8×1) reconstructed surface was prepared. Surface core level shifts were observed for As 3d (530 meV) and Ga (-460 meV, 360meV) which support a recently proposed model [1]. Two surface resonances were observed at -1.1 and -3.7 eV below the valence band maximum.