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Journal Article

Geometrical and electronic structure of the MBE-prepared GaAs(113)A surface

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Setzer,  Carsten
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Platen,  Jutta
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Geng,  Peter
Fritz Haber Institute, Max Planck Society;

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Ranke,  Wolfgang
Fritz Haber Institute, Max Planck Society;

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Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Setzer, C., Platen, J., Geng, P., Ranke, W., & Jacobi, K. (1997). Geometrical and electronic structure of the MBE-prepared GaAs(113)A surface. Surface Science, 377–379, 125-129. doi:10.1016/S0039-6028(96)01377-5.


Cite as: https://hdl.handle.net/21.11116/0000-0008-B520-7
Abstract
The GaAs (113)A surface was prepared by molecular beam epitaxy and investigated in situ by means of low-energy electron diffraction, surface core level spectroscopy and angle-resolved valence band photoemission. One stable, (8×1) reconstructed surface was prepared. Surface core level shifts were observed for As 3d (530 meV) and Ga (-460 meV, 360meV) which support a recently proposed model [1]. Two surface resonances were observed at -1.1 and -3.7 eV below the valence band maximum.