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Ordered GaAs quantum dot arrays on GaAs(001): Single photon emission and fine structure splitting

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Kiravittaya,  S.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Benyoucef,  M.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Zapf-Gottwick,  R.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Rastelli,  A.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Kiravittaya, S., Benyoucef, M., Zapf-Gottwick, R., Rastelli, A., & Schmidt, O. G. (2006). Ordered GaAs quantum dot arrays on GaAs(001): Single photon emission and fine structure splitting. Applied Physics Letters, 89(23): 233102.


Cite as: https://hdl.handle.net/21.11116/0000-000E-FB73-6
Abstract
Ordered GaAs/AlGaAs quantum dots (QDs) are fabricated on patterned
GaAs(001) substrates and their optical properties are investigated by
microphotoluminescence (PL) spectroscopy. QDs exhibit sharp excitonic
lines with typical single QD emission features. Photon-correlation
spectroscopy shows single photon emission for the neutral exciton
transition. Polarization-dependent PL measurements reveal a sharp
exciton line and a fine structure exchange splitting of about 70 mu eV.
(c) 2006 American Institute of Physics.