Conductance of a multiterminal ballistic wire

Kvon, Z. D.; Tkachenko, V. A.; Plotnikov, A. E.; Sablikov, V. A.; Renard, V.; Portal, J. C.

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Conductance of a multiterminal ballistic wire

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Portal, J. C.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Kvon, Z. D., Tkachenko, V. A., Plotnikov, A. E., Sablikov, V. A., Renard, V., & Portal, J. C. (2004). Conductance of a multiterminal ballistic wire. JETP Letters, 79(1), 36-39.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FEE0-7

Abstract

An experimental study of the two-, three-, and four-terminal resistance
of a ballistic wire is carried out. The wire is fabricated on the basis
of high-mobility 2D electron gas in an AlGaAs/GaAs heterojunction.
Different behavior of mesoscopic fluctuations of multiterminal
resistances is observed depending on the gate voltage and magnetic
field. At B = 0.45 T, the four-terminal resistance drops almost to zero
and features resembling a ballistic conductance quantization are
observed. (C) 2004 MAIK "Nauka / Interperiodica".