Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory 
magnetoresistance in GaAs/AlGaAs devices

Mani, R. G.; Smet, J. H.; von Klitzing, K.; Narayanamurti, V.; Johnson, W. B.; Umansky, V.

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Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices

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Mani, R. G.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Smet, J. H.
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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von Klitzing, K.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Mani, R. G., Smet, J. H., von Klitzing, K., Narayanamurti, V., Johnson, W. B., & Umansky, V. (2004). Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices. Physical Review Letters, 92(14): 146801.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FECE-D

Abstract

We examine the phase and the period of the radiation-induced
oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ
magnetic field calibration by electron spin resonance of
diphenyl-picryl-hydrazal. The results confirm a f-independent 1/4-cycle
phase shift with respect to the hf = j (h) over bar omega(c) condition
for j greater than or equal to 1, and they also suggest a small
(approximate to2%) reduction in the effective mass ratio, m*/m, with
respect to the standard value for GaAs/AlGaAs devices.