High-frequency point-contact spectroscopy of TiSi2, TaSi2, and VSi2

Balkashin, O. P.; Jansen, A. G. M.; Laborde, O.; Gottlieb, U.; Sukhodub, G. L.; Wyder, P.; Yanson, I. K.

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High-frequency point-contact spectroscopy of TiSi₂, TaSi₂, and VSi₂

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Jansen, A. G. M.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Wyder, P.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Balkashin, O. P., Jansen, A. G. M., Laborde, O., Gottlieb, U., Sukhodub, G. L., Wyder, P., et al. (2002). High-frequency point-contact spectroscopy of TiSi₂, TaSi₂, and VSi₂. Journal of Low Temperature Physics, 129(3-4), 105-116.

Cite as: https://hdl.handle.net/21.11116/0000-000E-ED1B-A

Abstract

High-frequency point-contact spectroscopy as well as
conventional low-frequency PC spectroscopy has been used for
determining the spectral functions of the electron-phonon
interaction (EPI) for three disilicides TiSi2, TaSi2, and VSi2.
The temperature dependences of resistivity have been calculated
from obtained EPI functions. Comparison of calculated
dependences with known experimental data allowed correction of
the electron-phonon interaction constants for the studied
disilicides.