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Journal Article

Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures

MPS-Authors
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Dashiell,  M. W.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Denker,  U.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Müller,  C.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Costantini,  G.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Manzano,  C.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Kern,  K.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Dashiell, M. W., Denker, U., Müller, C., Costantini, G., Manzano, C., Kern, K., et al. (2002). Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures. Applied Physics Letters, 80(7), 1279-1281.


Cite as: https://hdl.handle.net/21.11116/0000-000E-F3A1-9
Abstract
Low-temperature epitaxial growth of Si-Ge heterostructures
opens possibilities for synthesizing very small and abrupt low-
dimensional structures due to the low adatom surface
mobilities. We present photoluminescence from Ge quantum
structures grown by molecular-beam epitaxy at low temperatures
which reveals a transition from two-dimensional to three-
dimensional growth. Phononless radiative recombination is
observed from <105> faceted Ge quantum dots with height of
approximately 0.9 nm and lateral width of 9 nm. Postgrowth
annealing reveals a systematic blueshift of the Ge quantum
dot's luminescence and a reduction in nonradiative
recombination channels. With increasing annealing temperatures
Si-Ge intermixing smears out the three-dimensional carrier
localization around the dot. (C) 2002 American Institute of
Physics.