English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Transport measurements of valence band holes in p-type SiGe quantum well structure containing Ge quantum dots

MPS-Authors
/persons/resource/persons279884

Denker,  U.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280485

Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons279906

Eberl,  K.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280029

Haug,  R. J.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Haendel, K. M., Lenz, C., Denker, U., Schmidt, O. G., Eberl, K., & Haug, R. J. (2002). Transport measurements of valence band holes in p-type SiGe quantum well structure containing Ge quantum dots. Physica E, 13(2-4), 757-760.


Cite as: https://hdl.handle.net/21.11116/0000-000E-F105-C
Abstract
Magneto-tunnelling for holes was studied in SiGe/Si SiGe
heterostructures with Ge quantum dots of the 'hut cluster' type
in the middle of the Si-layer. At temperatures below 10 K two
different transport regimes can be distinguished in the
current-voltage characteristic. In high magnetic fields a
dramatic instability develops in the non-linear current-voltage
characteristics. The influence of different layer structures is
discussed. (C) 2002 Elsevier Science B.V. All rights reserved.