Transport measurements of valence band holes in p-type SiGe quantum well 
structure containing Ge quantum dots

Haendel, K. M.; Lenz, C.; Denker, U.; Schmidt, O. G.; Eberl, K.; Haug, R. J.

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Transport measurements of valence band holes in p-type SiGe quantum well structure containing Ge quantum dots

MPG-Autoren

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Denker, U.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Eberl, K.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Haug, R. J.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Zitation

Haendel, K. M., Lenz, C., Denker, U., Schmidt, O. G., Eberl, K., & Haug, R. J. (2002). Transport measurements of valence band holes in p-type SiGe quantum well structure containing Ge quantum dots. Physica E, 13(2-4), 757-760.

Zitierlink: https://hdl.handle.net/21.11116/0000-000E-F105-C

Zusammenfassung

Magneto-tunnelling for holes was studied in SiGe/Si SiGe
heterostructures with Ge quantum dots of the 'hut cluster' type
in the middle of the Si-layer. At temperatures below 10 K two
different transport regimes can be distinguished in the
current-voltage characteristic. In high magnetic fields a
dramatic instability develops in the non-linear current-voltage
characteristics. The influence of different layer structures is
discussed. (C) 2002 Elsevier Science B.V. All rights reserved.