Formation and ordering effects of C-induced Ge dots grown on Si(100) by 
molecular beam epitaxy

Leifeld, O.; Beyer, A.; Müller, E.; Kern, K.; Grützmacher, D.

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Formation and ordering effects of C-induced Ge dots grown on Si(100) by molecular beam epitaxy

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Leifeld, O.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Kern, K.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Leifeld, O., Beyer, A., Müller, E., Kern, K., & Grützmacher, D. (2000). Formation and ordering effects of C-induced Ge dots grown on Si(100) by molecular beam epitaxy. Materials Science and Engineering B, 74, 222-228.

Cite as: https://hdl.handle.net/21.11116/0000-000E-EB59-6

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