Electron scattering times in ZnO based polar heterostructures

Falson, J.; Kozuka, Y.; Smet, J. H.; Arima, T.; Tsukazaki, A.; Kawasaki, M.

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Electron scattering times in ZnO based polar heterostructures

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Smet, J. H.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Falson, J., Kozuka, Y., Smet, J. H., Arima, T., Tsukazaki, A., & Kawasaki, M. (2015). Electron scattering times in ZnO based polar heterostructures. Applied Physics Letters, 107(8): 082102.

Cite as: https://hdl.handle.net/21.11116/0000-000E-CCFE-F

Abstract

The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-theart MgZnO/ZnO heterostructures displaying electron mobilities in excess of 10(6) cm(2)/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors. (C) 2015 AIP Publishing LLC.