AC characterization of organic thin-film transistors with asymmetric 
gate-to-source and gate-to-drain overlaps

Zaki, T.; Rödel, R.; Letzkus, F.; Richter, H.; Zschieschang, U.; Klauk, H.; Burghartz, J. N.

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AC characterization of organic thin-film transistors with asymmetric gate-to-source and gate-to-drain overlaps

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Zschieschang, U.
Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society;

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Klauk, H.
Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Zaki, T., Rödel, R., Letzkus, F., Richter, H., Zschieschang, U., Klauk, H., et al. (2013). AC characterization of organic thin-film transistors with asymmetric gate-to-source and gate-to-drain overlaps. Organic Electronics, 14(5), 1318-1322.

Cite as: https://hdl.handle.net/21.11116/0000-000E-C721-C

Abstract

This paper presents S-parameter characterization and a corresponding physics-based small-signal equivalent circuit for organic thin-film transistors (OTFTs). Furthermore, the impact of misalignment between the source/drain contacts and the patterned gate on the dynamic TFT performance is explored and a simple method to estimate the misalignment from the measured S-parameters is proposed. An excellent fit between theoretical and experimental S-parameters is demonstrated. For this study, OTFTs based on the air-stable organic semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) having a channel length of 1 mu m and a gate-to-contact overlap of 5 or 20 mu m and being operated at a supply voltage of 3 V are utilized. The intentional asymmetry between gate-to-source and gate-to-drain overlaps is precisely controlled by the use of high-resolution silicon stencil masks. (C) 2013 Elsevier B. V. All rights reserved.