Ambipolar lateral diffusion of photo-induced carriers in a moderate magnetic 
field

Lembrikov, B. I.; Malits, P.; Haridim, M.; Potemska, E.; Vagner, I. D.

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Ambipolar lateral diffusion of photo-induced carriers in a moderate magnetic field

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Lembrikov, B. I.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Malits, P.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Vagner, I. D.
High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Lembrikov, B. I., Malits, P., Haridim, M., Potemska, E., & Vagner, I. D. (2006). Ambipolar lateral diffusion of photo-induced carriers in a moderate magnetic field. Journal of Physics: Condensed Matter, 18(15), 3817-3828.

Cite as: https://hdl.handle.net/21.11116/0000-000E-B596-C

Abstract

The ambipolar lateral diffusion of photo-induced charge carriers restricted in a plane of a quantum well (QW) under a moderate (non-quantizing) magnetic field is studied theoretically in the framework of the drift-diffusion model. The continuity equation for this case is solved exactly. The analytical expressions for the concentration of photo-induced electrons and the built-in electric field in the practically important cases of uniform and bell-shaped light beams are obtained in a closed form. It is shown that the ambipolar lateral diffusion of photo-induced charge carriers can be suppressed in InGaAs/GaAs QWs by a moderate magnetic field of similar to 0.5 mT.