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Journal Article

Morphology of graphene thin film growth on SiC(0001)

MPS-Authors
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Ohta,  Taisuke
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Horn,  Karsten
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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0710.0877.pdf
(Preprint), 383KB

njp8_2_023034.pdf
(Publisher version), 2MB

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Citation

Ohta, T., El Gabaly, F., Bostwick, A., McChesney, J. L., Emtsev, K. V., Schmid, A. K., et al. (2008). Morphology of graphene thin film growth on SiC(0001). New Journal of Physics, 10: 023034. doi:10.1088/1367-2630/10/2/023034.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-FD83-5
Abstract
Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as an applications-oriented point of view. Here, we study the emerging morphology of in vacuo prepared graphene films using low-energy electron microscopy (LEEM) and angle-resolved photoemission spectroscopy (ARPES). We obtain an identification of single-layer and bilayer graphene films by comparing the characteristic features in electron reflectivity spectra in LEEM to the π-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the layer thickness.