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Journal Article

Combining GW calculations with exact-exchange density-functional theory: an analysis of valence-band photoemission for compound semiconductors

MPS-Authors
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Rinke,  Patrick
Theory, Fritz Haber Institute, Max Planck Society;

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Qteish,  Abdallah
Theory, Fritz Haber Institute, Max Planck Society;

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Neugebauer,  Jörg
Theory, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons125143

Freysoldt,  Christoph
Theory, Fritz Haber Institute, Max Planck Society;

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Scheffler,  Matthias
Theory, Fritz Haber Institute, Max Planck Society;

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223003.pdf
(Any fulltext), 876KB

1367-2630_7_1_126.pdf
(Publisher version), 2MB

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Citation

Rinke, P., Qteish, A., Neugebauer, J., Freysoldt, C., & Scheffler, M. (2005). Combining GW calculations with exact-exchange density-functional theory: an analysis of valence-band photoemission for compound semiconductors. New Journal of Physics, 7, 126-1-126-35. doi:10.1088/1367-2630/7/1/126.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-0892-C
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