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Conference Paper

Reconstruction of cleaved 6H-SiC surfaces

MPS-Authors

Starke,  UIrich
Max Planck Society;

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Tallarida,  Massimo
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Kumar,  Ashwani
Molecular Physics, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21640

Horn,  Karsten
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Citation

Starke, U., Tallarida, M., Kumar, A., Horn, K., Seifarth, O., & Kipp, L. (2004). Reconstruction of cleaved 6H-SiC surfaces. In R. Madar, & J. Camassel (Eds.), Materials Science Forum (pp. 391-394). Zürich, Switzerland: Trans Tech Publications Ltd.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0011-0DFF-1
Abstract
Cleaved surfaces of silicon carbide were investigated using low-energy electron diffraction (LEED) and core level photoelectron spectroscopy (PES). Despite the hardness of SiC, cleavage is possible for basal plane surfaces. On both the Si and the C face, i.e. SiC(0001) and SiC(000 (1) over bar) flat surfaces can be obtained with a sharp LEED pattern. The observed LEED pattern is interpreted as a 3-domain superposition of (2x1) reconstructions on the basis of spot intensity differences. Si 2p and C 1s photoemission results are interpreted in view of other, stable SiC surface reconstructions. A comparison is drawn to the Si(111)-(2x1) surface where the reconstruction has been interpreted by Pandey in terms of the pi-bonded chain model.