First-principles calculations on CVD growth and doping in group-III-nitride 
semiconductors

Neugebauer, J.

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First-principles calculations on CVD growth and doping in group-III-nitride semiconductors

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Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, J. (2007). First-principles calculations on CVD growth and doping in group-III-nitride semiconductors. Talk presented at EuroCVD16 - Sixteenth European Conference on Chemical Vapor Deposition. The Hague, The Netherlands. 2007-09-16 - 2007-09-21.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-5058-7

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