Insulator-to-Metal Transition and Anomalously Slow Hot Carrier Cooling in a 
Photo-doped Mott Insulator

Choudhry, U.; Zhang, J.; Huang, K.; Low, E.; Quan, Y.; Shaheen, B.; Gnabasik, R.; Yan, J.; Rubio, A.; Burch, K. S.; Liao, B.

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Insulator-to-Metal Transition and Anomalously Slow Hot Carrier Cooling in a Photo-doped Mott Insulator

MPS-Authors

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Zhang, J.
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free-Electron Laser Science;
Laboratory of Theoretical and Computational Nanoscience, National Center for Nanoscience and Technology, Chinese Academy of Sciences;

/persons/resource/persons22028

Rubio, A.
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free-Electron Laser Science;
Center for Computational Quantum Physics, The Flatiron Institute;
Nano-Bio Spectroscopy Group, Universidad de País Vasco;

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https://arxiv.org/abs/2406.07355
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2406.07355.pdf
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引用

Choudhry, U., Zhang, J., Huang, K., Low, E., Quan, Y., Shaheen, B., Gnabasik, R., Yan, J., Rubio, A., Burch, K. S., & Liao, B. (2024). Insulator-to-Metal Transition and Anomalously Slow Hot Carrier Cooling in a Photo-doped Mott Insulator.

引用: https://hdl.handle.net/21.11116/0000-000F-6774-B

要旨

Photo-doped Mott insulators can exhibit novel photocarrier transport and relaxation dynamics and non-equilibrium phases. However, time-resolved real-space imaging of these processes are still lacking. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the spatial-temporal evolution of photoexcited species in a spin-orbit assisted Mott insulator {\alpha}-RuCl3. At low optical fluences, we observe extremely long hot photocarrier transport time over one nanosecond, almost an order of magnitude longer than any known values in conventional semiconductors. At higher optical fluences, we observe nonlinear features suggesting a photo-induced insulator-to-metal transition, which is unusual in a large-gap Mott insulator. Our results demonstrate the rich physics in a photo-doped Mott insulator that can be extracted from spatial-temporal imaging and showcase the capability of SUEM to sensitively probe photoexcitations in strongly correlated electron systems.